INFINEON
Infineon power semiconductors in stock at YILUDA TECH. Fifteen Infineon lines are held as 100% original, new and unused material, spanning high-voltage MOSFETs, IGBTs, motor drivers, an automotive CAN transceiver, a Cortex-M3 microcontroller and NOR flash.
Families on hand
- CoolMOS and SiC MOSFETs — IPW60R060P7 and IPP60R022S7 in TO247 and TO220, plus IMZA120R007M1H, a 1200 V silicon-carbide device for hard-switching topologies.
- IGBT — IDWD40G120C5, a 1200 V co-packaged device for induction heating and welding supplies.
- Motor and load drivers — BTS5200-4EKA and BTN8962TA, protected high-side and half-bridge switches for automotive body loads.
- Control and interface — CY9AF344NA (Cortex-M3, LQFP100), TLE9252VSK CAN transceiver, S25HS512TFANHI01 NOR flash.
- Discretes — IRLR2905TRPBF and IRLM6401TRPBF logic-level MOSFETs, BCV46E6327 Darlington transistor, IRF7316TRPBF dual N-channel.
Reading the CoolMOS code
The part number states the two numbers that matter: blocking voltage and on-resistance. IPW60R060P7 is a 600 V device at 60 milliohms; IPP60R022S7 is 600 V at 22 milliohms. Same voltage, very different die area, very different switching behaviour and cost. Substituting a higher-resistance part for a lower one is electrically safe in most topologies but will raise conduction loss and heatsink size; substituting the other way can change EMI and gate-drive requirements.
Sourcing notes
- TO247 and TO263 are not interchangeable on an existing board — the lead form and thermal pad differ.
- Automotive-qualified derivatives share model numbers with industrial parts; confirm the qualification suffix before a production release.
- Worldwide shipping from Shenzhen by DHL, FedEx or UPS.
Need a specific voltage and Rds(on) combination?
Send the voltage class, on-resistance target, package and gate-drive voltage, and we will check what Infineon stock we hold or can source.
Related power and analog: onsemi, STMicroelectronics, Toshiba, full inventory.
Substitution pitfalls
A higher Rds(on) part usually works and runs hotter; a lower one changes switching loss, EMI and gate charge, so the drive circuit has to be re-checked. Never swap a silicon MOSFET for a SiC device on the same gate driver: the gate charge and the required negative bias are different.